Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template
نویسندگان
چکیده
منابع مشابه
Low defect large area semi-polar (112) GaN grown on patterned (113) silicon
We report on the growth of semi-polar GaN (112̄2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited. Total thicknesses up to 5 m were realised without cracks in the layer. Transmission electron mi...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4941444